Abstract
Three kinds of ZnO nanowire arrays were fabricated on Au coated (1 1 0)silicon wafer by using of heating the mixture of zinc oxide (ZnO) and graphite powders at various depositing temperature. The synthesized samples were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) analytic technology, respectively. Structural analyses revealed that the morphologies and crystal microstructures of ZnO nanoarrays were related with the substrate temperature. And control to the growth morphologies can be achieved by carefully tuning the depositing temperature. The testing results to different nanowire arrays showed that the properties of field emission follow the Fowler–Nordheim law. The quais-aligned ZnO nanowire array sample synthesized at 750 °C had the lowest turn-on field of 7.4 V/μm, highest β of 1028. This largest emission efficiency is attributed to the clear tip and appropriate coverage density. As well as the nanowires are straight with long length and parallel to each other with good crystal quality. The experimental results could be very useful for field emission materials and other nanoelectronics device applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
