Morphology and electronic structure of thin 3,4,9,10-perylenetetracarboxylic dianhydride layers on Si(001)

Abstract

The growth of 3,4,9,10-perylenetetracarboxylic dianhydride on Si(001) was examined in the light of varying flux of impinging molecules. Using atomic force microscopy and synchrotron radiation photoelectron spectroscopy Vollmer–Weber growth mode was observed on a wide range of growth rates. The island size initially decreases rapidly with growth rate, for the low growth rate reaches a minimum, and then gradually increases. Polarization dependent photoemission indicates that the orientation of the molecules within the islands remains flat on the substrate.