Abstract
Cu X Zn1-XO films with different x content have been prepared bypulse laser deposition technique at room temperatures (RT) anddifferent annealing temperatures (373 and 473) K. The effect of xcontent of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology andelectrical properties of CuXZn1-XO thin films have been studied.AFM measurements showed that the average grain size values forCuXZn1-xO thin films at RT and different annealing temperatures(373, 473) K decreases, while the average Roughness values increasewith increasing x content. The D.C conductivity for all filmsincreases as the x content increase and decreases with increasing theannealing temperatures. Hall measurements showed that there aretwo types of conductance (n- type and p-type charge carriers). Alsothe variation of drift velocity (vd), carrier life time (), and free meanpath (l) with different x content and annealing temperatures weremeasured.
Highlights
Zinc oxide (ZnO), which is one of theThe electrical conductivity of ZnO is most important binary II-VI mainly due to a zinc excess at semiconductor compounds, has a interstitial sites
Cu X Zn1-XO films with different x content have been prepared by pulse laser deposition technique at room temperatures (RT) and different annealing temperatures (373 and 473) K
Atomic Force Microscope (AFM) measurements showed that the average grain size values for CuXZn1-xO thin films at RT and different annealing temperatures (373, 473) K decreases, while the average Roughness values increase with increasing x content
Summary
Cu X Zn1-XO films with different x content have been prepared by pulse laser deposition technique at room temperatures (RT) and different annealing temperatures (373 and 473) K. AFM measurements showed that the average grain size values for CuXZn1-xO thin films at RT and different annealing temperatures (373, 473) K decreases, while the average Roughness values increase with increasing x content. The D.C conductivity for all films increases as the x content increase and decreases with increasing the annealing temperatures. The variation of drift velocity (vd), carrier life time ( ), and free mean path (l) with different x content and annealing temperatures were measured. CuXZn1-XO thin films, Morphological properties, electrical properties, PLD technique. AFM قياسات.Cu XZn1-XO ( على الخصائص التركيبية والكھربائية للاغشية0, 0.2, 0.4, 0.6, 0.8) عند درجة حرارة الغرفة و درجات التلدين المختلفةCuXZn1-xO اظھرت ان حجم الحبيبة للاغشية التوصيلية الكھربائية للاغشية اظھرت.x ( كلفن تقل بينما قيم معدل الخشونة تزداد بزيادة المحتوى373, 473). المختلفة و درجات التلدينx ( لنسب المحتوىl)( و معدل المسار الحر ) ( و زمن عمر الحاملاتvd) الانجراف .المختلفة
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