Abstract
In this letter, co-implantation of P and Sb dopants into NiGe film is first proposed to improve the characteristic of NiGe/Ge contact. Through this technique, obvious enhancement of NiGe thermal stability is achieved. The surface morphology of NiGe film even keeps smooth and flat after post-germanidation annealing up to 600 $^{\circ}{\rm C}$ . The current characteristics of the formed NiGe/p-Ge diodes are also improved, exhibiting better rectifying performance. It is believed that the improved interface quality and the enhanced dopant activation contribute to these improvements. Therefore, this technique shows great potential for high performance Ge device technology.
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