Morphology and diameter controllable synthesis of boron nanowires

Abstract

Different morphology and diameter boron nanowires were synthesized by means of chemical vapor deposition on silicon substrates through controlling the growth temperature and the thickness of catalyst Au films. Smooth boron nanowires were fabricated at the temperature ranged from 800 to 900°C. The diameter of boron nanowires increased slightly with the growth temperature increasing. Boron nanochains with the periodic modulated diameter could be fabricated at the temperature of 950°C. As the thickness of Au films increases, the diameter and length of boron nanowires increase dramatically. The growth process of boron nanowires and nanochains was also discussed.