Abstract
Silicon nanowires were synthesized by electron beam plasmaenhanced chemical vapor deposition. The synthesis was carried out using indium and tin catalyst with an average particle size of 100 and 660 nm, respectively, in the temperature range 100-270 °C for indium and 200-335 °C for tin. The minimum (optimum) temperature was found at which an oriented array of microropes was formed. This temperature was 200 °C for indium and 335 °C for tin. In addition, it was found that the formation of individual microropes on the tin catalyst occurred at a temperature lower than the eutectic temperature (232 °C). For indium, this effect was not observed. The silica nanowires synthesized on both catalysts consist of SiOx with x ranging from 1.9 to 2 for all temperatures.
Highlights
Materials with reduced dimensionality (1D or 2D) have attracted considerable interest due to their unique properties and promising applications in photonic and photovoltaic devices, sensors, catalyst supports, etc. [1,2,3]
It was found that the formation of individual microropes on the tin catalyst occurred at a temperature lower than the eutectic temperature (232 °C)
This choice of particle sizes of the catalysts is based on experimental data showing that indium particles with a size of 80-100 nm and tin particles with a size of 400-700 nm are best suited for the synthesis of oriented arrays of microropes
Summary
Materials with reduced dimensionality (1D or 2D) have attracted considerable interest due to their unique properties and promising applications in photonic and photovoltaic devices, sensors, catalyst supports, etc. [1,2,3]. Silica nanowires with developed surface have a great potential for use in such devices. These nanowires have diverse and fairly simple morphology. They are modified and functionalized by applying thin films and decorating with metal nanoparticles [2, 3]. It was necessary to determine the minimum (optimum) temperature at which the synthesis of oriented microropes occurred. This would allow the use of inexpensive low-temperature substrates to simplify the manufacture of devices based on nanowires
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