Abstract
Semi-insulating polycrystalline silicon (polysilicon) films were used as replacements for the SiO2 passivation layers of mesa and planar high voltage semiconductor devices. Undoped, oxygen-doped and nitrogen-doped polysilicon films deposited by chemical vapour deposition directly onto the surface of silicon or onto thermal SiO2 were studied as surface passivation layers. The films were deposited by the thermal decomposition of SiH4 in the temperature range 500–650°C. Oxygen-doped polysilicon films were deposited from the SiH4N2ON2 system and nitrogen-doped films from the SiH4NH3N2 system.The structure and the electrical properties of these films and the influence of the film deposition parameters were investigated. Transmission electron microscopy and scanning electron microscopy were used to study the structure of the films. The leakage currents in test devices passivated by polysilicon were also studied. The semi-insulating polysilicon (SIPoS) passivation process was applied to high voltage and high power rectifier diodes.The degree of passivation of silicon devices composed of triple layers of oxygen-doped SIPoS, nitrogen-doped SIPoS and SiO2 films was found to be superior in several respects even to that with thermal SiO2 films.
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