Abstract
The article describes features of the wear site morphology formation during micro-scratching of a titanium alloy by a silicon carbide crystal in comparison with a corundum crystal. The initial shape of the crystal top and the rate of micro-scratching were assumed to be constant. No lubricating or cooling process media were used. External factors: micro-scratch depth and cutting path length. The chemical composition of wear sites was studied using micro-x-ray spectral analysis. The content of chemical elements in the surface layer of silicon carbide and adhered metal was studied at separate points and by area scanning. The accelerating voltage of the excitation electrons was changed in the range from 5 to 20 kV. The concentration of chemical elements on the surface of the wear site was determined immediately after micro-scratching and after removing the adhered metal by etching. The regularities of changes in the concentration of chemical elements depending on the accelerating voltage of the excitation electrons were determined.
Highlights
Titanium alloys are among the most common structural metals used in aviation and space technology, rocket science, medicine, and other industries [1, 2]
As a result of micro-x-ray analysis of the silicon carbide surface after micro-scratching of titanium, it was found that titanium is present in the silicon carbide nanolayers, which is not removed by etching in a solution of hydrofluoric acid
In titanium, which is adhere to the silicon carbide surface, an increase in the silicon content is observed
Summary
Titanium alloys are among the most common structural metals used in aviation and space technology, rocket science, medicine, and other industries [1, 2]. Titanium-based alloys are used to produce the most critical parts, the surface quality of which is formed during the final processing operations [3,4,5]. The study of the titanium alloy grinding process is relevant to the current issues of modern mechanical engineering. In the periodic table of chemical elements, titanium is located in the IVB subgroup of the 5th period. The state of the valence electrons of an isolated atom corresponds to the d2s2 configuration. Possible variants of electronic rearrangement are d→p-, s→d-, s→p-transitions. Transitions of d→p type for elements of IVB subgroup are not energetically favorable, since the result is a configuration of d1 which is less stable than d2
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