Abstract
A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34¯17} when disk-shaped SiO2 mask still remained. Three facets {11¯05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45¯130} and another three facets {11¯010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5min, most of pyramids on the PSS disappeared.
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