Abstract
AbstractSilicon carbide coating was developed using chemical vapor deposition on carbon substrate as a protective coating. The present studies were carried out with methyl trichlorosilane as the SiC precursor, at 1673 K along with hydrogen and argon as carrier gas using a high-temperature vertical graphite reactor. The SiC coatings were characterized by means of X-ray diffraction for phase identification. Scanning electron microscopy analysis with energy dispersive X-ray spectrometer was also carried out for microstructure and elemental analysis. From the morphological study of different SiC deposits obtained at varying operating parameters it was observed that methyl trichlorosilane feed rate and hydrogen flow rate play a major role in deciding the nature of deposits and the argon percentage in the mixed gas also plays a vital role.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
