Abstract
ZnO nanorods were grown on thermally oxidized p‐type silicon substrate using sol‐gel method. The SEM image revealed high‐density, well‐aligned, and perpendicular ZnO nanorods on the oxidized silicon substrate. The XRD profile confirmed the c‐axis orientation of the nanorods. PL measurements showed the synthesized ZnO nanorods have strong ultraviolet (UV) emission. The electrical characterization was performed using interdigitated silver electrodes to investigate the stability in the current flow of the fabricated device under different ultraviolet (UV) exposure times. It was notified that a stable current flow was observed after 60 min of UV exposure. The determination of stable current flow after UV exposure is necessary for UV‐based gas sensing and optoelectronic devices.
Highlights
Zinc oxide (ZnO) belongs to II–VI semiconductor compound which has a wide bandgap energy (∼3.37 eV) and stable wurtzite structure with lattice spacing a = 0.325 nm and c = 0.521 nm
ZnO nanostructures can synthesized with different morphologies such as nanowires [17], nanotubes [18], nanorings [19], nano-tetrapods [20], and nanoflakes [21] via variety of methods including MOCVD [22], thermal evaporation [23], molecular beam epitaxy (MBE) [24], electrochemical deposition [25], spray pyrolysis [26], and sol-gel [27]
A well-characterized and preparable ZnO nanostructure has long been expected for its application in specialized optoelectronic devices
Summary
ZnO nanostructures can synthesized with different morphologies such as nanowires [17], nanotubes [18], nanorings [19], nano-tetrapods [20], and nanoflakes [21] via variety of methods including MOCVD [22], thermal evaporation [23], molecular beam epitaxy (MBE) [24], electrochemical deposition [25], spray pyrolysis [26], and sol-gel [27]. Among these methods, the sol-gel technique is the simplest and least expensive. The current-to-voltage (I-V) measurements were performed at different time intervals to investigate the effect of timing on the sensor at a fixed UV power
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