Abstract
Abstract Si/Ge multilayers with a total thickness of 65 nm were grown by molecular beam epitaxy (MBE) and treated with pulsed Nd:YAG laser (1.06 μm) irradiation. Using transmission electron microscopy (TEM) clear evidence is found that the Si/Ge multilayers contain nanoislands after irradiation. Depending on the conditions of laser irradiation the average size and density of the nanoislands vary within 4–12 nm and 8.7×109–5.8×1010 cm−2. Rutherford backscattering spectroscopy (RBS) demonstrates that no visible redistribution of Ge and Si takes place after laser irradiation. The results are discussed in terms of depression of melting point.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
