Morphological, optical and photoluminescent properties of a thin ZnO film on the Al2O3 substrate

A N Chumakov,N I Mukhurov,T F Raichenok,A A Shevchenok,N A Bosak,S V Denisiuk,L V Baran

doi:10.29235/1561-2430-2018-54-3-341-352

Abstract

Thin transparent conductive zinc oxide films are of interest for application in various fields of science and technology, including anti-icing systems for glasses in aircrafts, in coatings that reduce static electric charge on instrument panels, in electrical contacts to liquid crystals, electrochromic and electroluminescent indicators for displays, development of high-efficiency solar cells. Thin zinc oxide films on anodic aluminium oxide substrates are formed on the porous side and on the barrier layer of γ -aluminium oxide under high-frequency pulsed-periodic laser deposition in vacuum. The morphology of the obtained films was studied by atomic-force microscopy and their differences were noted, depending on the side of the substrate. The optical properties of films in the near-IR region, as well as the features of their photoluminescence characteristics were studied experimentally. The substrates Al 2 O 3 –ZnO film as a sensitive layer can be used to design sensors and tandem solar cells.

Highlights

Thin transparent conductive zinc oxide films are of interest for application in various fields of science and technology, including anti-icing systems for glasses in aircrafts, in coatings that reduce static electric charge on instrument panels, in electrical contacts to liquid crystals, electrochromic and electroluminescent indicators for displays, development of high-efficiency solar cells
Thin zinc oxide films on anodic aluminium oxide substrates are formed on the porous side and on the barrier layer of γ-aluminium oxide under high-frequency pulsed-periodic laser deposition in vacuum
The morphology of the obtained films was studied by atomic-force microscopy and their differences were noted, depending on the side of the substrate

Summary

Introduction

Пропускание подложки γ-оксида алюминия и осажденных пленок оксида цинка на подложке γ-оксида алюминия со стороны барьерного слоя (образец No 1) представлены на рис. Спектры пропускания подложки γ-оксида алюминия и осажденных пленок оксида цинка на подложке γ-оксида алюминия со стороны пористой поверхности (образец No 2), показанные на рис. 600 нм, затем замедляется и достигает 90 % в области длин волн свыше 1100 нм, в то время как пропускание для пленки оксида цинка на подложке γ-оксида алюминия со стороны барьерного слоя плавно растет, причем в обоих случаях в области длин волн свыше 1100 нм заметны осцилляции пропускания с характерным периодом 30 нм.

Results

Conclusion