Abstract
We report on the optical and structural integrity of metalorganic vapor-phase epitaxy-grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Photoluminescence and surface morphology as measured by atomic force microscopy were investigated for different numbers of DBR periods and different DBR-growth temperatures. An increasing number of DBR periods may severely degrade the quantum well surface morphology and photoluminescence. Surface secondary-ion mass spectroscopy revealed surface segregation of an Al-containing species. Decreasing the DBR-growth temperature lowers the surface concentration of Al and improves the GaInNAs quantum-well morphology.
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