Abstract
The morphology and chemical composition of InxGa1-xAs NWs grown on undoped GaAs (111)B substrate have been investigated using scanning electron microscopy (SEM) and energy dispersive x-ray (EDX), respectively. SEM images show that InxGa1-xAs NWs underwent morphological evolution as temperature changes. By changing the growth temperature, the growth mechanism of NWs was assumed to have changed. Both characterizations results suggested the growth mechanism has strong influence to the evolution of the NWs morphologies and also to the distribution of the chemical composition of NWs.
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