Abstract
A model is presented for describing atomic-scale processes and their effect on the evolution of the large-scale morphologies during epitaxial growth. We first consider growth on vicinal GaAs(001) surfaces, where the density of surface steps on the simulated surfaces reproduces quantitatively the evolution of the reflection high-energy electron diffraction (RHEED) intensity oscillations for appropriately chosen growth and diffraction conditions. The areas of disagreement between the RHEED measurements and the basic model are then used as a basis for introducing additional processes in the model that reflect the presence of barriers to interlayer transport and short-range non-diffusive mobility of arriving atoms. This model is shown to provide agreement with RHEED measurements over the entire range of transient growth, steady-state growth and recovery. The large-scale morphological implications of these additional process are then explored and compared with atomic force microscope scans of quenched singular GaAs(001) surfaces.
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