Abstract
For the first time, focused ion beam milling, secondary electron microscopy, and transmission electron microscopy were used to examine in depth morphological defects during epitaxial growth of CdTe and CdSeTe on Si. Contrary to the literature regarding the formation of morphological defects at the epi/substrate interface, the present defects appear to originate from either the CdTe/CdSeTe interface or 3–4 µm above the CdTe/Si interface where the growth was interrupted and the substrate temperature was temporarily raised. This suggests a correlation between defect nucleation and either shutter movement or growth interruption.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
