Abstract
In the present study, the morphological changes of a semiconductor growth interface from a solution were observed by near-infrared microscopy in rotating and static magnetic fields generated by two kinds of electromagnetic setups. The rotating magnetic setup had a maximum magnetic induction of 12 mT with a frequency of 50 Hz at the center of the furnace. The static magnetic field was produced by a single solenoid with a maximum magnetic induction of 800 mT. The growth of GaP/GaP (1 1 1) B was performed by a linear cooling method at the rate of 1 K/min under a starting growth temperature of 1173 K. The results revealed few differences in the morphological changes during growth under constant rotating magnetic fields of 0 and 12 mT. It was shown that the transverse static magnetic field of 800 mT reduced the growth rate and suppressed the appearance of macrosteps on the facet region.
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