Abstract
In this work, pure and doped Vanadium Pentoxide (V2O5) thin films with different concentration of TiO2 (0, 0.1, 0.3, 0.5) wt were obtained using Pulse laser deposition technique on amorphous glass substrate with thickness of (250)nm. The morphological, UV-Visible and Fourier Transform Infrared Spectroscopy (FT-IR) were studied. TiO2 doping into V2O5 matrix revealed an interesting morphological change from an array of high density pure V2O5 nanorods (~140 nm) to granular structure in TiO2-doped V2O5 thin film .Transform Infrared Spectroscopy (FTIR) are used to analyze structural properties of as-deposit. The transmittance and absorption of each film, in the spectral range 300 to 1100 nm, were measured from which the optical constants (Refractive index, Absorption coefficient, Extinction coefficient and Energy gap) were determined .The energy band gap of the films was found to be change from (2.38 to 2.9) eV when the concentration of TiO2 increases from (2.78 to 2.9 ) eV The results showed a significant improvement in the transmittance and refractive index in TiO2 doped V2O5 thin films .All measured values were in consistent with other previous studies.
Highlights
The transition metal oxides attract a lot of attention due to their interesting physical, chemical, electronic, and optical properties which arise from the narrow d states as well as their hybridization with the ligand p orbital
The vanadium pentoxide (V2O5) has attracted considerable interest owing to their multi valence, layered structure, wide optical band gap, good chemical and thermal stability, and excellent thermoelectric property [1, 2]
2.4 eV, which stems from the split-off oxygen 2p band up to vanadium 3d band
Summary
The transition metal oxides attract a lot of attention due to their interesting physical, chemical, electronic, and optical properties which arise from the narrow d states as well as their hybridization with the ligand p orbital.The vanadium pentoxide (V2O5) has attracted considerable interest owing to their multi valence, layered structure, wide optical band gap, good chemical and thermal stability, and excellent thermoelectric property [1, 2].Scientific and technological applications of V2O5 in thin films form includes electronic and optical switches [3], electro chromic devices [4], window for solar cell [5, 6], microelectronic devices [7], thin film batteries (TFB) [8]. The transition metal oxides attract a lot of attention due to their interesting physical, chemical, electronic, and optical properties which arise from the narrow d states as well as their hybridization with the ligand p orbital. The vanadium pentoxide (V2O5) has attracted considerable interest owing to their multi valence, layered structure, wide optical band gap, good chemical and thermal stability, and excellent thermoelectric property [1, 2]. Scientific and technological applications of V2O5 in thin films form includes electronic and optical switches [3], electro chromic devices [4], window for solar cell [5, 6], microelectronic devices [7], thin film batteries (TFB) [8]. Electronic conduction in V2O5 is highlyanisotropic with conduction within the a-b planes considerably higher than conduction perpendicular to these planes
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