Abstract
In this paper the porous silicon (PS) was fabricated by photo electrochemical technique. Deposition of Cu2O thin film on nanocrystal-lines silicon by pulse laser was deposited by using the Tattoo removal laser, 2J and 1064 nm wavelength, and high purity Cu target at 350K in static air. Surface morphology and Photoluminescence for PS and Cu2O/Ps were investigated.
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Schedule a callMore From: Iraqi Journal of Computer, Communication, Control and System Engineering
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