Morphological and electrical study of porous TiO2 films with various concentrations of Pluronic F-127 additive

Abstract

Porous TiO2 thin films were synthesized by dip-coating method on silicon substrates. Pluronic F-127 (F127), a structure-directing agent, was used to promote the evolution of pores during the synthesis of TiO2 thin films. The concentration of F127 was varied from 0.3 to 3.75 mM. FESEM micrograph has confirmed the presence of porous morphology, whereas XRD and Raman studies have revealed the formation of the anatase phase of the sample. Capacitance–voltage (C–V) measurement was carried out using TiO2 based metal oxide semiconductor (MOS) capacitor structure, where F127 was incorporated in the oxide layer. The oxide charge density was found to be increased with the concentration of F127 co-polymer. Interface trap density has a maximum value of 6.6 × 1012 eV−1 cm−2 after the addition of 3 mM of F127. It was found out that the 3 mM of F127 has better memory effect during the resistive switching study.