More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Abstract

In this letter, more than 3000 V reverse blocking Schottky-drain AlGaN-channel HEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage $\text{V}_{\textsf {FB}}$ (at 10 $\mu \text{A}$ /mm) is improved from 1850~2100 V to 2200~2600 V for ${L} _{\textsf {GD}}=\textsf {22}\mu \text{m}$ . Due to the high breakdown electric field of AlGaN material, reverse blocking voltage ${V} _{\textsf {RB}}$ (at 10 $\mu \text{A}$ /mm) reaches as high as −1950 ~ −2200 V. For HEMTs with ${L} _{\textsf {GD}}=\textsf {52}\mu \text{m}$ , record high ${V} _{\textsf {FB}}$ of >3000 V and ${V} _{\textsf {RB}}$ of >3000 V have been achieved. The leakage current is as low as 6.06 nA/mm at ${V} _{\textsf {DS}}=-\textsf {2000}$ V.