MoOx 기반 실리콘 이종접합 고성능 광검출기

Abstract

Transparent n-type metal-oxide semiconductor of <TEX>$MoO_x$</TEX> was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of <TEX>$MoO_x$</TEX> on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type <TEX>$MoO_x$</TEX>/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer (<TEX>$MoO_x$</TEX>) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.