MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications.

Abstract

Topographic essential synthesis of nanomaterials by adjusting easy preparatory factors is an effective way to improve a variety of nanostructured materials. The SILAR technique is used to evaluate the manufacturing samples of MoO3, TiO2, and MoTiO5 nanostructures. These nanostructures of MoO3, TiO2, and MoTiO5 are used as electrode materials in photovoltaic systems. The link between photoelectrochemical characteristics and MoO3, TiO2, and MoTiO5 nanostructures is studied in depth. The photoelectrochemical characteristics of MoO3, TiO2, and MoTiO5 nanostructures are discovered to be highly dependent. At a 5mV/s scan rate, the photocurrent of MoO3, TiO2, and MoTiO5 electrodes surged fast when sunlight was turned on, reaching values of 1.03 mA cm-2, 1.68 mA cm-2, and 14.20 mA cm-2, respectively. As soon as the solar illumination was turned off, the photocurrent value dropped to zero. Photocurrent transitions showed a quick, homogeneous photocurrent counterpart; this suggested that charge transfer in these ingredients is speedy and possibly related to the crystal buildings of MoO3, TiO2, and MoTiO5. MoTiO5 nano-belt and nano-disc thin films have typical uses in the photoelectrochemical sector because they have the best photoresponse and stability.