Abstract
Morphology transformation and crystal growth strategies of metal oxide semiconductors are still extensively studied in material science recently, because the morphology and crystallinity significantly affect the physicochemical characteristics of metal oxide nanomaterials. However, understanding the morphology changes of α-MoO3 induced by annealing is still a challenge. Herein, the nanostructure transition of α-MoO3 induced by the annealing temperature is carefully investigated via the XRD and SEM methods. It can be found that crystallization is highly dependent on the annealing temperature. Interestingly, the MoO3 nanoflowers can change into nanosheets at 500 °C. Afterward, the nanosheets turned into microrods with the increase in annealing temperature due to the continuous growth of MoO3 crystal. On the other hand, the sensing performances of various MoO3 nanostructures are studied toward ethanol gas. Compared to the MoO3 nanoflowers and microrods, the MoO3 nanosheets-based sensor exhibits superior sensing performance to ethanol, and the maximum response value is 8.06.
Highlights
In the past few decades, the development of nanotechnology and band gap engineering have created various exotic metal oxide semiconductor (MOS) nanostructures, which open up new perspectives for their exploitation, significantly creating the novel and fascinating devices [1,2,3,4,5]
High performance photodetector based on p-type Cu1 − xNixO films were prepared, and the crystal quality, morphology, and grain size of Cu1 − xNixO films can be manipulated by Ni doping [27]
The results show that the nanostructure can be manipulated from nanoflowers to nanorods via alteration of annealing temperature
Summary
In the past few decades, the development of nanotechnology and band gap engineering have created various exotic metal oxide semiconductor (MOS) nanostructures, which open up new perspectives for their exploitation, significantly creating the novel and fascinating devices [1,2,3,4,5]. Nanostructure transformation and crystal growth are very important to fabricate the optoelectronic devices with superior performances [23]. High performance photodetector based on p-type Cu1 − xNixO films were prepared, and the crystal quality, morphology, and grain size of Cu1 − xNixO films can be manipulated by Ni doping [27]. As a representative n-type semiconductor oxide material with an energy gap of about 3.2 eV, molybdenum oxide (MoO3) has been extensively used in various devices such as sensors, lithium-ion batteries, and photodetectors due to the high thermal and chemical stability [28,29,30]. The MoO3 nanostructure transformation and crystal quality induced by annealing temperature is more compelling. The results show that the nanostructure can be manipulated from nanoflowers to nanorods via alteration of annealing temperature
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