Abstract
A three-dimensional Monte-Carlo simulation of surface reactions in plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon thin films has been carried out. The increase of Si-H2 bonds in the films with increase of SiH2 radical density was explained naturally in terms of surface roughness caused by high sticking probability of SiH2. The effective roughness monitored as voids by in situ ellipsometry supports the simulated results.
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