Abstract
Hopping transport of charge carriers in thin (up to 100 nm) organic layers, which are suitable for organic light-emitting diodes and solar cells, is modeled in the framework of Gaussian disorder model. Drift mobility dependence within ranges of layer thickness, energy disorder and field strength is considered. Monte-Carlo simulations for low concentration case show weak dependence on type of lattice – simple cubic, body-centered and face-centered lattice. Results of this work are compared with the results obtained recently by Cottaar et al., done within master equation approach. The comparison shows the deviation at low disorder. Additionally we take into account influence of barrier-limited injection in case of cubic lattice.
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