Year-end Sale % OFF 
Abstract
AbstractIn this paper, we use three‐dimensional kinetic Monte Carlo simulations on superlattices to study the hetero‐polytypical growth of cubic silicon carbide polytype (3C‐SiC) on hexagonal 6H‐SiC step‐bunched substrates with miscuts towards the <11‐20> and <1‐100> directions. We find that the preferential 3C conversion observed on <1‐100> misoriented substrates could be due to a different step‐to‐island interaction which enhances island stability and expansion in this specific direction. For this reason 3‐4 degrees off step‐bunched 6H substrates with miscut towards the <1‐100> direction should be the best choice for the stable and reproducible hetero‐polytypical growth of high quality cubic epitaxial films. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
