Abstract
Monte Carlo simulations of hot electron transport in n-type GaN when the interaction of the electrons with polar optical phonons is dynamically screened shows the effects of antiscreening at carrier densities of (1-5)x1024 m-3. At these densities full coupling between the Plasmon-phonon systems could be ignored to a first approximation together with degeneracy. Our calculations used the Lindhard formalism with Fermi-Dirac distribution and with neglecting the collisional damping when dynamic screened electron phonons scattering rates calculated. The screened scattering rate is strongly enhanced at low electron temperature and high carrier concentrations due to antiscreening property of inverse dielectric function. Antiscreening delays runaway and intervalley transfer to higher valleys. The peak drift velocity is enhanced and as result, so is the peak valley ratio.
Highlights
In the early 1970s, interest in GaN-based devices has risen rapidly
Monte Carlo simulations of hot electron transport in n-type GaN when the interaction of the electrons with polar optical phonons is dynamically screened shows the effects of antiscreening at carrier densities of (1-5)x1024 m-3
Littlejohn et al (1975) were the first to report results obtained from Monte Carlo simulations of the steady-state electron transport within bulk wurtzite GaN
Summary
In the early 1970s, interest in GaN-based devices has risen rapidly. There has been considerable interest in GaN due to its wide band gap and favorable material properties, such as high electron mobility, very high thermal conductivity and a high breakdown (O’Leary et al, 2006). Littlejohn et al (1975) were the first to report results obtained from Monte Carlo simulations of the steady-state electron transport within bulk wurtzite GaN. Gelmont et al (1993) reported on ensemble two-valley Monte Carlo simulations of the electron transport within bulk wurtzite GaN. Mansour et al (1995) reported the use of such an approach in order to determine how the crystal temperature influences the velocity-field characteristic associated with bulk wurtzite GaN. Kolník et al (1995) reported on employing full-band Monte Carlo simulations of the electron transport within bulk wurtzite GaN and bulk zincblende GaN. We explore the effect of antiscreening to model hot electron transport at high electric fields with aim of illuminating features such as the peak drift velocity, the peak to valley ratio, runaway, and the electron transfer negative differential resistance
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