Abstract
An ensemble Monte Carlo approach has been used to simulate spin relaxation in GaAs devices. Effect of varying temperature and applied bias on spin relaxation time has been studied in n-type bulk GaAs. Our results show that the spin relaxation times are longer at low temperatures and that increasing the applied bias yields enhancement of the spin polarization in the system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
