Abstract
Abstract Monte Carlo simulation is used to study defect production during ion bombardment. The systems of 300 keV Ni+ → Ni and 1 MeV H+ → Ni are studied as representatives of heavy-ion and light-ion bombardment, respectively. The number of isolated defects—vacancies and interstitials—is determined which have no recombination partner within a distance of one recombination radius r rec. Our simulations predict a fraction of freely-migrating defects of 1.5% for 300 keV Ni+ bombardment, and 20% for 1 MeV H+ bombardment, if a common value of r rec ≌ 10 Å is employed. This is in good agreement with measured data.
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