Abstract
Electron transport characteristics of strained Si1−yCy random alloy grown on a Si (100) substrate are studied theoretically using the Monte Carlo technique. The value of alloy scattering potential has a strong influence on the low-field electron mobility. Valley repopulation effect combined with decreased scattering rate of electrons in strained Si1−yCy material can give rise to the increase of in-plane drift electron velocity with carbon concentration, in spite of the enhancement of alloy scattering. Electron transport characteristics have been calculated over a wide range of electric fields and temperatures.
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