Abstract
We present a numerical study of the effects of nonthermal phonon distributions on electron transport across heterolayers. For the microscopic analysis of both the electron and phonon dynamics, an ensemble Monte Carlo method has been used which includes a realistic band structure. It is observed that the abrupt energy gain at the heterointerface generates significant perturbations in the phonon distribution through the subsequent relaxation and heats the electron distribution because of the reabsorption of nonequilibrium phonons. The influence of a wide range of operating conditions on hot-phonon effects is also discussed.
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