Abstract
A detailed analysis of hole transport in cascaded $p\text{\ensuremath{-}}\text{Si}∕\text{SiGe}$ quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the $6\ifmmode\times\else\texttimes\fi{}6\phantom{\rule{0.3em}{0ex}}\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane $\mathbf{k}$-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz $\text{Si}∕\text{SiGe}$ quantum cascade structures.
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