Abstract
We report the first detailed ensemble Monte Carlo simulation of hole dynamics in cascaded p-Si/SiGe quantum wells. The hole subband structure is calculated using the 6 × 6 k · p model. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. The scattering mechanisms included are the alloy disorder, acoustic and optical phonon scattering. Results are presented for prototype Si/SiGe cascade structures.
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