Abstract
Monte Carlo simulations of Hg0.7Cd0.3Te avalanche photodiodes are presented. The simulated very low excess noise and exponential gain curve are consistent with those that have been experimentally observed and are consistent with the speculated large ratio of electron and hole impact ionization rates. The simulations suggest that there is a large difference between the scattering rates of electrons and holes, a direct consequence of the band structure. A resonance behavior in the excess noise factor at gain values near 2, 4, 8, and 16 is also revealed in the simulations. This effect is explained by comparing to the gain and noise of a photomultiplier tube.
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