Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs

Abstract

Monte Carlo device simulations are carried out to analyse electron transport in scaled Si and In 0.3 Ga 0.7 As MOSFETs starting from a 25 nm gate length Si and In 0.3 Ga 0.7 As MOSFETs monitoring the electron velocity, kinetic energy and sheet density along the channel at a supply voltage of 1.0 V. We have found that while the drive current is scaled Si MOSFETs dramatically increases, the current increase in scaled In 0.3 Ga 0.7 As MOSFET is less pronounced. The drive current increases despite the decline of the injection velocity in Si MOSFETs from 15 nm gate length. A principal reason of the current increase is the increase in the velocity at the drain side of the device.