Abstract
The kinetic Monte Carlo simulation of GaAs/GaAs(001) molecular beam epitaxial growth considering V/III flux ratio influence on nucleating island characteristics is presented. It is shown that the island density increases with the surface coverage increase and reaches saturation after deposition of ∼0.1 monolayer of GaAs. The increase of V/III flux ratio from 3 to 40 leads to the increase of the island density from 1.9-1012 to 2.6-1012 cm-2. At the same time the average size decreases from 4.4 to 4.1 nm. The island size distribution function narrows with V/III flux ratio increase. This is attributed to the shortage of gallium atoms in comparison with deposited arsenic molecules that prevents large island formation and leads to the dramatic growth of little island concentration. The simulation demonstrates good agreement with experimental results.
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