Abstract
The ultrafast dynamics of photoexcited carriers in a semiconductor is investigated by using a Monte Carlo simulation. In addition to a ``conventional'' Monte Carlo simulation, the coherence of the external light field and the resulting coherence in the carrier system are fully taken into account. This allows us to treat the correct time dependence of the generation process showing a time-dependent linewidth associated with a recombination from states off resonance due to stimulated emission. The subsequent dephasing of the carriers due to scattering processes is analyzed. In addition, the simulation contains the carrier-carrier interaction in Hartree-Fock approximation giving rise to a band-gap renormalization and excitonic effects which cannot be treated in a conventional Monte Carlo simulation where polarization effects are neglected. Thus the approach presents a unified numerical method for the investigation of phenomena occurring close to the band gap and those typical for the energy relaxation of hot carriers.
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