Monte Carlo simulation of scanning electron microscope signals for lithographic metrology

Abstract

AbstractTwo computer codes for simulating the backscattered, transmitted, and secondary‐electron signals from targets in a scanning electron microscope are described. The first code, MONSEL‐II, has a model target consisting of three parallel lines on a three‐layer substrate, while the second, MONSEL‐III, has a model target consisting of a two‐by‐two array of finite lines on a three‐layer substrate. Elastic electron scattering is determined by published fits to the Mott cross section. Both plasmon‐generated electrons and ionized valence electrons are included in the secondary production. An adjustable quantity, called the residual energy loss rate, is added to the formula of Joy and Luo to obtain the measured secondary yield. The codes show the effects of signal enhancement due to edge transmission, known as blooming, as well as signal reduction due to neighboring lines, known as the “black‐hole” effect.