Abstract
We investigate the issue of radiation-induced failures in electronic devices by developing a Monte Carlo tool called MC-Oracle. It is able to transport the particles in device, to calculate the energy deposited in the sensitive region of the device and to calculate the transient current induced by the primary particle and the secondary particles produced during nuclear reactions. We compare our simulation results with SRAM experiments irradiated with neutrons, protons and ions. The agreement is very good and shows that it is possible to predict the soft error rate (SER) for a given device in a given environment.
Highlights
Radiation-induced failures in electronic devices represent a major concern for microelectronic reliability, especially for aerospace applications [1,2,3]
For incident ions only ionization is accounted for as it has already been established that nuclear reactions induced by ions have a very low contribution to upset bit rate
For incident neutron and proton, nuclear reactions have been pre-calculated with the DHORIN code [6]
Summary
Radiation-induced failures in electronic devices represent a major concern for microelectronic reliability, especially for aerospace applications [1,2,3]. We will consider a specific kind of malfunction that is called single event effect (SEE), meaning that a unique particle is able to trigger a failure. Cosmic rays are able to interact with molecule nucleus of the atmosphere and produce secondary particles whose flux depends on the altitude. One major issue for memory devices is when a unique particle is able to upset a bit from its value to its opposite. These Single Event Upsets (SEU) can occur in space and in atmosphere and it is useful to be able to predict the number of failures induced in a given memory at a given location (i.e. as a function of altitude and latitude). The Soft Error Rate can be calculated for a specific location, which is defined by the altitude and the latitude in atmosphere or for a given mission in Space
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