Monte Carlo simulation of optical emission spectra in electron assisted chemical vapor deposition of diamond

Abstract

The optical emission spectra of atomic hydrogen, atomic carbon and radical CH in electron assisted chemical vapor deposition (EACVD) were studied by using the Monte Carlo simulation when CH4/H2 gas mixture was used as the input gases. Effects of the experimental parameters on emission spectra and synthesis of di amond films were investigated. The results obtained suggested that the CH radica ls should be considered as a precursor species for diamond deposition but atomic carbon C is not. The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean ele ctron temperature. A method of determining the mean temperature of electron was gained by using atomic hydrogen emission line, and the optimum experimental cond ition for diamond deposition was also obtained. These results are of great impor tance for depositing high_quality diamond films by controlling the conditions of technology efficiently.