Abstract
Numerical Monte Carlo calculations of the electron noise temperature dependence on the electric field strength in n-type InSb are presented. It is established that hot electron noise temperature in strongly compensated InSb increases with the increase of electron density due to more intensive electron–electron scattering stimulating delocalization of electrons from the bottom of the conduction band. For low electron density, when the electron–electron scattering is negligibly small, the electron noise temperature is found to become close to the lattice temperature in a wide range of electric field strength in which the electron gas cooling effect takes place. Satisfactory agreement between calculations of the electron noise temperature and available experimental data has been obtained.
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