Abstract
We discuss the impact ionization phenomena in submicrometer Si-MOSFET's by employing a self-consistent Monte Carlo-Poisson device simulator. Two different impact ionization models, the new ionization model recently proposed by the authors and the conventional Keldysh model, are used to explore the effect of impact ionization on the electron energy distribution and the substrate current in Si-MOSFET's. We show that impact ionization plays a major role in determining the high energy tail of the energy distribution and the substrate current, and that the dependence upon the particular choice of modeling scheme for impact ionization becomes more visible in Si-MOSFET's than in bulk Si.
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