Abstract
We have developed a computer simulation of ion beam-induced epitaxial crystallisation (IBIEC) based on the familiar kink-and-ledge model which describes thermally activated solid phase epitaxy. In the latter, kinks are assumed to form (via thermal activation) on ledges. Here, we assume that the deposited ion energy induces kink formation on the terraces as well as on the ledges. We then derive, with minimal restrictions on the growth laws, the interface morphology evolution. The latter is correlated to the growth speed, and an interpretation of the IBIEC temperature dependence is proposed. The power laws which characterise the simulated interface evolution are those of the Kardar-Parisi-Zhang universality class.
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