Abstract
Recent applications of simple electron-counting arguments have proved useful in explaining the relative stability of the various surface atom configurations occurring during MBE growth at III-V semiconductor surfaces. Electron-counting considerations impose constraints upon the stable chemisorption of deposited atoms, requiring that growth proceeds via a well-defined sequence of stable chemisorption stages. A simple way of incorporating this effect into Monte Carlo simulations of III-V MBE growth is presented. It is shown that the incorporation of electron-counting constraints into a simulation of growth of the GaAs (001) 2*4 system has a significant effect upon the degree of layer-by-layer growth and upon the surface roughness of the simulated grown surface.
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