Abstract
One of the method of analyzing the electron transport in semiconductors is the Monte Carlo (MC) simulation that is able to solve the semi-classical Boltzmann transport equation. The conventional MC simulation, however, takes no accounts of quantum effects, such as collisional broadening, intra-collisional field effect and so on. We have proposed a new model for the MC simulation which can handle effects of broadening of the spectral density function, and calculated transport properties of IDEGs where only the ground subband was taken into account1. In the present study, we extend this model to take into account of multi-subband effects and evaluate the transport response of 1DEGs. Throughout this paper we set ħ = 1.
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