Abstract
Ensemble Monte-Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The influence of interband impact ionization process on the transistor characteristics is investigated within the framework of Keldysh impact ionization model. Effective threshold energy of electron impact ionization as a parameter characterizing the process is calculated. The dependence of the effective threshold energy on the drain bias is determined.
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