Monte Carlo Simulation of Heteroepitaxial Growth of Ge on Pit-patterned Si(100) Substrate and Parallelization of Calculations

Abstract

Methods and algorithms of Monte Carlo simulation of heteroepitaxial growth of Ge on Si are considered. The computational complexity analysis of simulation program blocks is carried out. Parallelization of time-consuming cycles using directives of the open standard OpenMP is proposed. The Monte Carlo simulation of heteroepitaxial growth of Ge on pitpatterned Si substrate was carried out. The position of Ge nanoislands is determined by the competition between the nucleation process of three-dimensional islands due to the accumulation of elastic strain in the growing layer and the process of diffusion of Ge atoms into the pits serving as a drain.