Abstract
An ensemble Monte Carlo simulation of Gunn domain dynamics in submicron-gate power GaAs MESFETs with a recessed gate structure is described. Time evolution of the two-dimensional particle distribution reveals three different domain motions, i.e. full-traveling, half-traveling, and stationary domains, depending on the geometrical parameters and bias conditions. The increase in recess width towards drain direction can effectively reduce the maximum electric field in the domain, resulting in suppression of Gunn oscillation while maintaining identical drain current values. An introduction of a surface n/sup +/ region is also proved to be effective in suppressing Gunn oscillation. Based on the simulation results, a criterion determining whether the domain becomes traveling or stationary is proposed. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
